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| NTE2338 Silicon NPN Transistor Darlington Power Amp w/Internal Damper & Zener Diode Absolute Maximum Ratings: (TA = +25C unless otherwise specified) Collector-Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60 10V Emitter-Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7V Collector Current, IC Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.5A Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.0A Collector Dissipation (TC = +25C), PC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10W Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55 to +150C Electrical Characteristics: (TA = +25C unless otherwise specified) Parameter Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current DC Current Gain Collector-Emitter Saturation Voltage Symbol V(BR)CBO V(BR)EBO ICEO hFE VCE(sat) VBE(sat) ton toff Test Conditions IC = 0.1mA, IE = 0 IE = 50mA, IC = 0 VCE = 50V, RBE = VCE = 3V, IC = 1A IC = 1A, IB = 1mA IC = 1.5A, IB = 1.5mA Base-Emitter Saturation Voltage IC = 1A, IB = 1mA IC = 1.5A, IB = 1.5mA Turn-On Time Turn-Off Time IC = 1A, IB1 = -IB2 = 1mA Min 50 7 - 2000 - - - - - - Typ 60 - - - - - - - 0.5 2.0 Max 70 - 10 30000 1.5 2.0 2.0 2.5 - - V V V V s s Unit V V A Schematic Diagram C B E .330 (8.38) Max .175 (4.45) Max .450 (11.4) Max .118 (3.0) Dia .655 (16.6) Max .030 (.762) Dia E C B .090 (2.28) .130 (3.3) Max |
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